Download Architecture Design for Soft Errors by Shubu Mukherjee PDF

By Shubu Mukherjee

ISBN-10: 0123695295

ISBN-13: 9780123695291

This e-book offers a complete description of the architetural concepts to take on the gentle errors challenge. It covers the hot methodologies for quantitative research of sentimental mistakes in addition to novel, low cost architectural strategies to mitigate them. to supply readers with a greater seize of the wider challenge deffinition and resolution area, this publication additionally delves into the physics of sentimental mistakes and reports present circuit and software program mitigation suggestions. desk OF CONTENTS bankruptcy 1: creation bankruptcy 2: machine- and Circuit-Level Modeling, dimension, and Mitigation bankruptcy three: Architectural Vulnerability research bankruptcy four: complex Architectural Vulnerability research bankruptcy five: errors Coding suggestions bankruptcy 6: Fault Detection through Redundant Execution bankruptcy 7: mistakes restoration bankruptcy eight: software program Detection and restoration * presents the methodologies essential to quantify the impact of radiation-induced tender mistakes in addition to cutting-edge concepts to guard opposed to them

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The latter is useful for comparing the reliability for different workloads. Unlike MTTF, both MITF and MWTF try to capture the amount of work done till an error is experienced. Hence, MITF and MWTF are often useful in doing trade-off studies between performance and error rate. The definitions of MTTF and FIT rate have one subtlety that may not be obvious. Both terms are related to a particular scope (as explained in the last section). Consider a bit with ECC, which can correct an error in the single bit.

6 Permanent Faults in Complementary Metal Oxide Semiconductor Technology 19 referred to as “hot” carriers. Interestingly, however, HCI becomes worse as ambient temperature decreases because of a corresponding increase in carrier mobility. 1 eV. 6 × 10−19 C. 38 × 10−23 ) ∼ 36 000 K. Typically, the drain saturation current (IDsat ) degradation is used to measure HCI degradation because IDsat is one of the key transistor parameters that most closely approximates the impact on circuit speed and because HCI-related damage occurs only during normal operation when the transistor is in saturation.

Further, thermal neutrons may also arise in semiconductor processes that use the boron-10 isotope. 26 CHAPTER 1 Introduction of New York City, although its GR is eight times higher than that of New York City. The JEDEC standard [13] describes how to map a given terrestrial site to its GR and compute the corresponding neutron flux at that location. In summary, three factors influence the neutron flux at a terrestrial site: the solar cycle, its altitude, and its latitude and longitude, which determines its GR.

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